56Gbaud PIN Photodiode Chip > 광다이오드(PD) 부문

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광다이오드(PD) 부문

작성자 최고관리자 작성일19-12-10 14:03 조회1,376회 댓글0건

개요	56Gbaud PIN Photodiode Chip
Features	InGaAs/InP PIN-PD with integrated backside lens Semi-planar structure for high reliability 12㎛ active diameter Coplanar GSG contact pads 4ch array available with 250/750㎛ PD pitch -40 to +85℃ operation Low dark current
Application	Single λ 100Gbps receiver / 4λ 400GbE TRx